Higher power density industrial applications can now benefit from the utilization of Infineon's CoolSiC MOSFETs in a Q-DPAK package, offering a 1200V rating.
Infineon Technologies AG Introduces High-Performance CoolSiC MOSFETs
Infineon Technologies AG has unveiled the CoolSiC MOSFETs 1200 V G2 in a top-side-cooled (TSC) Q-DPAK package, a new addition to their X-DPAK top-side cooling platform. These MOSFETs are designed for demanding industrial applications and offer several key advantages, making them ideal for power electronics requiring compact size and high power density.
The CoolSiC MOSFETs 1200 V G2 are available in two Q-DPAK configurations: a single switch and a dual half-bridge. This versatility supports compact system designs and simplifies manufacturing due to the Q-DPAK package's compatibility with automated assembly processes.
One of the significant benefits of the CoolSiC MOSFETs 1200 V G2 is their low device capacitances and temperature-independent switching losses, enabling high efficiency across a wide temperature range. Other advantages include an intrinsic diode with a low reverse recovery charge and threshold-free on-state characteristics, superior gate oxide reliability, best-in-class conduction and switching losses, high transconductance, and short-circuit robustness.
These MOSFETs are suitable for hard- and resonant-switching topologies, such as LLC and ZVS, and can operate at high switching frequencies, facilitating significant system size and cooling reduction, and higher power density. The Q-DPAK package design allows for minimised parasitic inductance, which is critical for higher switching speeds.
The Q-DPAK package also enhances thermal performance by enabling direct heat dissipation from the device's top surface to the heatsink, resulting in more than 15% lower thermal resistance when using Infineon's improved .XT die attach interconnection technology.
Applications for these CoolSiC MOSFETs in TSC Q-DPAK packages include photovoltaic inverters, battery charging and formation, server and telecom power supplies, servo and motor drives, energy storage and uninterruptible power supplies (UPS), industrial switched-mode power supplies (SMPs), and auxiliary power supplies.
The new CoolSiC 1200 V G2 technology offers up to 25% lower switching losses for equivalent R devices, making them an attractive choice for designers seeking to optimise system performance. The outstanding R values, ranging from 4 mΩ to 78 mΩ, provide the flexibility to do just that.
The CoolSiC MOSFET 1200 V G2 in Q-DPAK single switch and dual half-bridge package variants are currently available for purchase. For more information about the CoolSiC MOSFET discretes, visit www.infineon.com/coolsic-mosfet-discretes.
References:
[1] Infineon Technologies AG. (2022). Infineon Introduces CoolSiC MOSFET Discretes for High-Performance Power Conversion Applications. Retrieved from https://www.infineon.com/cms/en/product/power/power-discrete/coolmos-si-discretes/coolSiC-mosfet-discretes/141374
[3] Infineon Technologies AG. (2022). Infineon Introduces CoolSiC MOSFET Discretes for High-Performance Power Conversion Applications. Retrieved from https://www.infineon.com/cms/en/newsroom/corporate/press-releases/2022/infineon-introduces-coolSiC-mosfet-discretes-for-high-performance-power-conversion-applications/
The CoolSiC MOSFETs 1200 V G2 are targeted at various industries that require high-efficiency power electronics, such as finance, energy, technology, and industrial sectors. These MOSFETs are ideal for photovoltaic inverters, server and telecom power supplies, industrial switched-mode power supplies (SMPs), and energy storage systems, which are crucial in the finance, energy, and technology industries. Additionally, these MOSFETs can operate at high switching frequencies, facilitating significant system size and cooling reduction, and higher power density, making them valuable in the technology and energy sectors where compactness and high power density are essential.
